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RJK0328DPB Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer RJK0328DPB
Bauteilbeschribung  Silicon N Channel Power MOS FET Power Switching
PDF  7 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0328DPB Datenblatt(HTML) 3 Page - Renesas Technology Corp

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RJK0328DPB
REJ03G1637-0400 Rev.4.00 Apr 10, 2008
Page 3 of 6
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Drain Current
ID
(A)
Static Drain to Source on State Resistance
vs. Drain Current
100
80
60
40
20
0
2
468
10
100
80
60
40
20
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
80
60
40
20
0
50
100
150
200
VDS = 10 V
Pulse Test
VGS = 2.6 V
Pulse Test
1
0.3
0.1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
10
3
VGS = 4.5 V
10 V
2.8 V
3.0 V
10 V
3.2 V
4.5 V
Pulse Test
0.1
1
10
100
10
100
1000
1
0.1
100
µs
PW = 10 ms
1 ms
10
µs
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse
5 A



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