ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.

November 1999 - Ed: 4B

ULTRA-FAST, SOFT RECOVERY.

VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION

TRANSISTOR.

HIGH FREQUENCY AND/OR HIGH PULSED

CURRENT OPERATION.

HIGH REVERSE VOLTAGE CAPABILITY.

LOW INDUCTANCE PACKAGE < 5 nH.

INSULATED PACKAGE : ISOTOP

TM

Capacitance : < 45pF.

FEATURES AND BENEFITS

TURBOSWITCH 1200V drastically cuts losses in

all high voltage operationswhich require extremely

fast, soft and noise-free power diodes. Due to their

optimized switching performances they also highly

decrease power

losses

in

any

associated

switching IGBT or MOSFET in all freewheel mode

operations.

They are particularly suitable in Motor Control

circuitries, or in the primary of SMPS as snubber,

clamping or demagnetizing diodes. They are also

suitable for secondary of SMPS as high voltage

rectifier diodes.

DESCRIPTION

25A

1200V

60ns

1.9V

MAIN PRODUCT CHARACTERISTICS

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

1200

V

RMS forward current

50

A

Repetitive peak forward current

tp = 5

µs F = 5kHz square

300

A

Surge non repetitive forward current

tp = 10ms sinusoidal

210

A

Storage temperature range

- 65 to + 150

°C

Maximum operating junction temperature

150

°C

ABSOLUTE RATINGS (limiting values, per diode)

STTA2512P

STTA5012TV1/2

®

TURBOSWITCH

™ ULTRA-FAST HIGH VOLTAGE DIODE

ISOTOP

TM

K2

A2

K1

A1

STTA5012TV1

K2

K1

A1

A2

STTA5012TV2

K

K

A

SOD93

STTA2512P

1/9