| Datenblatt-Suchmaschine für elektronische Bauteile |
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RJK4007DPP Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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RJK4007DPP Datenblatt(HTML) 2 Page - Renesas Technology Corp |
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2 / 4 page ![]() RJK4007DPP Rev.1.00, Mar.24.2005, page 2 of 3 Electrical Characteristics (Tch = 25°C) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-source breakdown voltage V(BR)DSS 400 — — V ID = 1 mA, VGS = 0 V Drain-source leakage current IDSS — — 1 mA VDS = 400 V, VGS = 0 V Gate-source leakage current IGSS — — ±0.1 µA VGS = ±25 V, VDS = 0 V Gate-source threshold voltage VGS(th) 3.0 3.5 4.0 V ID = 1 mA, VDS = 10 V Drain-source on-state resistance rDS(ON) — 0.47 0.55 Ω ID = 7 A, VGS = 10 V Drain-source on-state voltage VDS(ON) — 3.29 3.85 V ID = 7 A, VGS = 10 V Input capacitance Ciss — 850 — pF Output capacitance Coss — 140 — pF Reverse transfer capacitance Crss — 20 — pF VDS=25 V, VGS = 0 V, f = 1 MHz Turn-on delay time td(on) — 35 — ns Turn-on rise time tr — 30 — ns Turn-off delay time td(off) — 95 — ns Turn-off fall time tf — 35 — ns VDD = 200 V, ID = 7 A, VGS = 10 V, RGEN = RGS = 50 Ω Source-drain voltage VSD — 1.0 1.5 V IS = 7 A, VGS = 0 V Thermal resistance Rth(ch-c) — — 3.9 °C/W Channel to case |
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