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2SC1345 Datenblatt(PDF) 4 Page - Renesas Technology Corp

Teilenummer 2SC1345
Bauteilbeschribung  Silicon NPN Epitaxial
PDF  11 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC1345 Datenblatt(HTML) 4 Page - Renesas Technology Corp

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2SC1345 (K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
55
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
55
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
—
V
I
C = 1 mA, RBE =
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
VI
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.5
µA
V
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
—
—
0.5
µA
V
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
—
1200
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
—
0.75
V
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
—
0.5
V
I
C = 10 mA, IB = 1 mA
Collector output capacitance
Cob
—
2.3
3.5
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
—
230
—
MHz
V
CE = 12 V, IC = 2 mA
Noise figure
NF
—
—
8
dB
V
CE = 6 V, IC = 0.1 mA,
f = 10 Hz, R
g = 10 kΩ
——
1
dB
V
CE = 6 V, IC = 0.1 mA,
f = 1 kHz, R
g = 10 kΩ
Note:
1. The 2SC1345(K) is grouped by h
FE as follows.
DE
F
250 to 500
400 to 800
600 to 1200



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