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FS30ASJ-06F Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer FS30ASJ-06F
Bauteilbeschribung  High-Speed Switching Use Nch Power MOS FET
PDF  7 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FS30ASJ-06F Datenblatt(HTML) 3 Page - Renesas Technology Corp

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FS30ASJ-06F
Rev.1.00, Aug.20.2004, page 3 of 6
Performance Curves
Drain Power Dissipation Derating Curve
Case Temperature Tc (°C)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
0
20
40
60
80
100
0200
50
100
150
100
3
5
7
101
2
3
5
7
102
7
2
3
2
3
5
2
10 0 2 3
7101
5
55
7102
3
3
7
tw = 10
µs
100
µs
10ms
1ms
DC
Tc = 25°C
Single Pulse
Output Characteristics (Typical)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage VGS (V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
0
10
20
30
40
50
0
1.0
2.0
3.0
4.0
5.0
8V
3V
3.5V
2.5V
6V
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
2.5V
0
10
20
30
40
50
101
102
103
37
7
5
2
100
37
5
23
2
5
10V
0
0.4
0.8
1.2
1.6
2.0
02468
10
30A
10A
VGS = 4V
Tc = 25°C
Pulse Test
ID = 50A
PD = 50W
Tc = 25°C
Pulse Test
VGS = 10V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
VGS = 10V
3V
3.5V
4V
5V



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