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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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VV6501 Datenblatt(PDF) 20 Page - STMicroelectronics |
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VV6501 Datenblatt(HTML) 20 Page - STMicroelectronics |
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20 / 44 page  STV0681 Hardware Interfaces STV0681 20/44 ADCS 7283313C 4.2.3 SDRAM refresh period The SDRAM refresh period from STV0681 is guaranteed to be inferior or equal to 15.6 µs during ‘Snapshot’/self-timer/continuous/tethered video modes of operation (that is not standby mode). In standby mode, the SDRAM is set to self-refresh, therefore no refresh from STV0681 takes place. 4.2.4 SDRAM initialisation period The SDRAM initialisation period is currently set to 981 µs in STV0681. Figure 5: SDRAM Write Timing (16Mbit device, burst write) Table 3: Timing parameters for SDRAM read/write Symbol Min. Max Units Symbol Min. Max Units tCK 166.45 166.89 ns tDS 81.01 ns tCH ½tCK tDH 83.41 ns tCL ½tCK tRCD 1tCK tAC ½tCK tRAS 55 tCK tOH 0ns tRC 7tCK tCMS 82.88 ns tRP 2tCK tCMH 82.85 ns tRCD 1tCK tAS 82.88 ns tAH 82.76 ns DCLK Command DQM A0-9,BA A10 ACTIVE WRITE NOP PRECHARGE NOP ROW COLUMN ROW DIN M DIN M + 1 DIN M + 2 DIN M + 3 DQ tCK tRCD tRC CKE tRAS tRP tCMS tCMH tAS tAH tL tH tCMS tCMH tDS tDH |
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