FS70VSJ-06F datasheet(2/7 Pages) RENESAS

2 / 7 page

FS70VSJ-06F

Rev.1.00, Aug.20.2004, page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Drain-source breakdown voltage

V(BR)DSS

—

ID = 1 mA, VGS = 0 V

Gate-source breakdown voltage

V(BR)GSS

±20

—

IG =

±100 µA, VDS = 0 V

Drain-source leakage current

IDSS

—

100

µAVDS = 60 V, VGS = 0 V

Gate-source leakage current

IGSS

——

±10

µAVGS = ±20 V, VDS = 0 V

Gate-source threshold voltage

VGS(th)

1.0

1.5

2.0

ID = 1 mA, VDS = 10 V

Drain-source on-state resistance

rDS(ON)

—5.5

7.0

Ω

ID = 35 A, VGS = 10 V

Drain-source on-state resistance

rDS(ON)

—6.6

8.3

Ω

ID = 35 A, VGS = 4 V

Drain-source on-state voltage

VDS(ON)

—

0.19

0.25

ID = 35 A, VGS = 10 V

Forward transfer admittance

| yfs |

—

110

—

ID = 35 A, VDS = 10 V

Input capacitance

Ciss

—

8500

—

Output capacitance

Coss

—

1300

—

Reverse transfer capacitance

Crss

—

720

—

VDS = 10 V, VGS = 0 V,

f = 1MHz

Turn-on delay time

td(on)

—42—

Rise time

—

130

—

Turn-off delay time

td(off)

—

800

—

Fall time

—

330

—

VDD = 30 V, ID = 35 A,

VGS = 10 V,

RGEN = RGS = 50

Ω

Source-drain voltage

VSD

—1.0

1.5

IS = 35 A, VGS = 0 V

Thermal resistance

Rth(ch-c)

—

1.0

°C/W

Channel to case

Reverse recovery time

trr

—70—

IS = 70 A, dis/dt = –100 A/

µs

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