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BB503C Datenblatt(PDF) 6 Page - Renesas Technology Corp

Teilenummer BB503C
Bauteilbeschribung  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
PDF  11 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB503C Datenblatt(HTML) 6 Page - Renesas Technology Corp

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BB503C
Rev.5.00 Aug 10, 2005 page 6 of 10
0
1
234
5
30
24
18
12
6
VDS = 5 V
RG = 47 kΩ
f = 1 kHz
0
12
3
4
5
30
24
18
12
6
VDS = 5 V
RG = 68 kΩ
f = 1 kHz
Gate1 Voltage
VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Gate1 Voltage
VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
VG2S = 1 V
4 V
3 V
2 V
VG2S = 1 V
4 V
3 V
2 V
0
510
15
20
4
3
2
1
0
10
20
50
100
0
5
10
15
20
30
25
20
15
10
5
0
10
100
20
50
30
25
20
15
10
5
0
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
4
3
2
1
0
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
Drain Current ID (mA)
Gate Resistance RG (kΩ)
Noise Figure vs. Gate Resistance
Gate Resistance RG (kΩ)
Power Gain vs. Gate Resistance
Drain Current ID (mA)
Power Gain vs. Drain Current
Noise Figure vs. Drain Current
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz



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