STW33N20 datasheet(2/9 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Rthc-si nk

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

0.66

0.1

300

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current, Repetitive or Not -Repet itive

(pulse width limited by Tj max,

δ <1%)

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

600

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID =250

µAVGS =0

200

IDSS

Zero G ate Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating

Tc =100

100

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate

Threshold

Voltage

VDS =VGS

ID =250

µA

34V

RDS( on)

St atic Drain-source On

Resistance

VGS =10 V

ID = 16 A

0.073

0.085

Ω

ID(o n)

On St ate Drain Current

VDS >ID(on) xRDS(on) max

VGS =10 V

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconduct ance

VDS >ID(on) xRDS(on)max

ID =16 A

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse T ransfer

Capacitance

VDS =25 V

f = 1 MHz

VGS = 0

3500

550

120

4500

700

160

STW33N20

2/9

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