STX817 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

44.6

139

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = -120 V

-500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = -80 V

-1

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -10 mA

-80

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -100 mA

IB = -10 mA

IC = -1 A

IB = -100 mA

-0.25

-0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -100 mA

IB = -10 mA

IC = -1 A

IB = -100 mA

-1

-1.1

hFE

∗

DC Current Gain

IC = -100 mA

VCE = -2 V

IC = -500 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

140

Transition Frequency

IC = -0.1 A

VCE = -10 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

STX817

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