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STY30NA50 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STY30NA50
Bauteilbeschribung  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  4 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY30NA50 Datenblatt(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on T ime
Rise Time
VDD =250 V
ID =15 A
RG =4.7
Ω
VGS =10 V
40
70
55
90
ns
ns
(di/ dt)on
Turn-on Current Slope
VDD =400 V
ID =30 A
RG =47
Ω
VGS =10 V
240
A/
µs
Qg
Qgs
Qgd
Total Gat e Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400 V
ID =30 A
VGS = 10 V
245
27
120
320
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall T ime
Cross-over T ime
VDD =400 V
ID =30 A
RG =4.7
Ω
VGS =10 V
75
30
110
100
40
145
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
30
120
A
A
VSD (
∗)Forward On Voltage
ISD =30 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =30 A
di/dt = 100 A/
µs
VDD =100 V
Tj = 150
oC
800
17. 6
44
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STY30NA50
3/4



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