IRFD110 datasheet(3/8 Pages) VISHAY

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Document Number: 91127

www.vishay.com

S-81263-Rev. A, 21-Jul-08

IRFD110, SiHFD110

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91127_01

20 µs Pulse Width

C = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

Bottom

Top

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

101

100

101

10-1

91127_02

101

100

101

10-1

Bottom

Top

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

C = 175 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

91127_03

101

100

VGS, Gate-to-Source Voltage (V)

567

910

10-1

°C

175

°C

20 µs Pulse Width

DS = 50 V

91127_04

D = 5.6 A

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

180

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