MBR0520PBF datasheet(3/5 Pages) VISHAY

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Document Number: 94281

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Revision: 14-Aug-08

MBR0520PbF

Schottky Diode, 0.5 A

Vishay High Power Products

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

Fig. 4 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 5 - Forward Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR (1 - D)

0.01

0.1

VFM - Forward Voltage Drop (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

J = 150 °C

J = 100 °C

J = 25 °C

0.001

0.0001

100

0.1

0.01

VR - Reverse Voltage (V)

J = 150 °C

J = 125 °C

J = 100 °C

J = 75 °C

J = 50 °C

J = 25 °C

100

1000

VR - Reverse Voltage (V)

515

J = 25 °C

100

110

120

130

140

160

150

IF(AV) - Average Forward Current (A)

0.4

0.2

0.6

0.8

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

Square wave

(D = 0.50)

See note (1)

0.3

0.2

0.1

IF(AV) - Average Forward Current (A)

0.6

0.8

0.2

0.4

RMS limit

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

100

tp - Square Wave Pulse Duration (µs)

100

1000

10 000

At any rated load condition

and with rated V

RRM applied

following surge

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