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ST333SP Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer ST333SP
Bauteilbeschribung  Inverter Grade Thyristors (Stud Version), 330 A
PDF  9 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

ST333SP Datenblatt(HTML) 2 Page - Vishay Siliconix

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Document Number: 94377
2
Revision: 30-Apr-08
ST333SP Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 330 A
CURRENT CARRYING CAPABILITY
FREQUENCY
UNITS
50 Hz
840
600
1280
1040
5430
4350
A
400 Hz
650
450
1280
910
2150
1560
1000 Hz
430
230
1090
730
1080
720
2500 Hz
140
60
490
250
400
190
Recovery voltage VR
50
50
50
V
Voltage before turn-on VD
VDRM
VDRM
VDRM
Rise of on-state current dI/dt
50
-
-
A/µs
Case temperature
50
75
50
75
50
75
°C
Equivalent values for RC circuit
10/0.47
10/0.47
10/0.47
Ω/µF
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state
current at case temperature
IT(AV)
180° conduction, half sine wave
330
A
75
°C
Maximum RMS on-state current
IT(RMS)
DC at 63 °C case temperature
518
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
11 000
t = 8.3 ms
11 520
t = 10 ms
100 % VRRM
reapplied
9250
t = 8.3 ms
9700
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
605
kA2s
t = 8.3 ms
550
t = 10 ms
100 % VRRM
reapplied
430
t = 8.3 ms
390
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
6050
kA2
√s
Maximum peak on-state voltage
VTM
ITM = 1810 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
1.96
V
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.91
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
0.92
Low level value of forward slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.58
m
Ω
High level value of forward slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.58
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM



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