TN2540-800G datasheet(3/5 Pages) STMICROELECTRONICS

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100

125

(A)

T(AV)

D.C.

α=180°

Tcase(°C)

Fig. 3: Average and D.C. on-state current versus

case temperature.

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

I ,I [Tj]/I ,I [Tj=25°C]

GT H

IGT

Tj(°C)

Fig. 5: Relative variation of gate trigger current and

holding current versus junction temperature.

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

K=[Zth/Rth]

Zth(j-c)

Zth(j-a)

tp(s)

Fig. 4: Relative variation of thermal impedance

versus pulse duration.

100

1000

120

160

200

240

280

320

(A)

TSM

Tj initial=25°C

F=50Hz

Number of cycles

Fig. 6: Non repetitive surge peak on-state current

versus number of cycles.

P(W)

α=180°

α=120°

α=90°

α=60°

α=30°

D.C.

(A)

T(AV)

Fig. 1: Maximum average power dissipation ver-

sus average on-state current .

100

120

140

P(W)

Tcase (°C)

125

α=180°

Rth=0°C/W

Rth=1°C/W

Rth=2°C/W

Rth=3°C/W

100

105

110

115

120

Tamb(°C)

Fig. 2 : Correlation between maximum average

power dissipation and maximum allowable tem-

peratures (Tamb and Tcase) for different thermal

resistances heatsink+contact.

TN2540-G

3/5

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