MMBZ12VALSLASHDG datasheet(4/15 Pages) NXP

4 / 15 page

MMBZXVAL_SER_1

Product data sheet

Rev. 01 — 1 September 2008

4 of 15

NXP Semiconductors

MMBZxVAL series

Double ESD protection diodes for transient overvoltage suppression

Limiting values

[1]

In accordance with IEC 61643-321 (10/1000

µs current waveform).

[2]

Measured from pin 1 or 2 to pin 3.

[3]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[4]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1 or 2 to pin 3.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

PPPM

rated peak pulse power

tp = 10/1000 µs

[1][2] -40

IPPM

rated peak pulse current

tp = 10/1000 µs

[1][2]

MMBZ12VAL

MMBZ12VAL/DG

2.35

MMBZ15VAL

MMBZ15VAL/DG

1.9

MMBZ18VAL

MMBZ18VAL/DG

1.6

MMBZ20VAL

MMBZ20VAL/DG

1.4

MMBZ27VAL

MMBZ27VAL/DG

-1

MMBZ33VAL

MMBZ33VAL/DG

0.87

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[3] -

265

[4] -

360

junction temperature

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 7.

ESD maximum ratings

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VESD

electrostatic discharge voltage

[1][2]

IEC 61000-4-2

(contact discharge)

-30

machine model

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