| Datenblatt-Suchmaschine für elektronische Bauteile |
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PTH08T240FAS Datenblatt(PDF) 2 Page - Texas Instruments |
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PTH08T240FAS Datenblatt(HTML) 2 Page - Texas Instruments |
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2 / 37 page ![]() PTH08T240F 2 V I 5 9 + C I 220 mF (Required) 8 R SET [A] 1% 0.05 W (Required) Track GND V OAdj TT 4 3 GND GND RTT 1% 0.05W (Required) TurboTrans +Sense 6 L O A D -Sense GND + 11 R UVLO 1% 0.05 W (Optional) Inhibit INH/UVLO Track 10 7 -Sense +Sense V O C O 1000 mF (Required) SYNC 1 SmartSync C I 2 22 mF (Recommended) V O V I UDG-07125 PTH08T240F SLTS277C – DECEMBER 2006 – REVISED DECEMBER 2008........................................................................................................................................ www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. A. RSET required to set the output voltage to a value higher than 0.69 V. See Electrical Characteristics table. 2 Submit Documentation Feedback Copyright © 2006–2008, Texas Instruments Incorporated Product Folder Link(s): PTH08T240F |
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