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AMMC-5023 Datenblatt(PDF) 1 Page - AVAGO TECHNOLOGIES LIMITED

Teilenummer AMMC-5023
Bauteilbeschribung  23 GHz Low Noise Amplifier (21.2-26.5 GHz)
PDF  9 Pages
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Hersteller  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Direct Link  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

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AMMC-5023
23 GHz Low Noise Amplifier (21.2 – 26.5 GHz)
Data Sheet
Description
Avago’s AMMC-5023 is a high gain, low noise amplifier
that operates from 21 GHz to over 30 GHz. By eliminating
the complex tuning and assembly processes typically
required by hybrid (discrete-FET) amplifiers, the AMMC-
5023 is a cost-effective alternative in both 21.2–23.6 GHz
and 24.5–26.5 GHz communications receivers. The device
has good input and output match to 50 Ohm and is un-
conditionally stable to more than 40 GHz. The backside
of the chip is both RF and DC ground. This helps simplify
the assembly process and reduces assembly related per-
formance variations and costs. It is fabricated in a PHEMT
process to provide exceptional noise and gain perfor-
mance. For improved reliability and moisture protection,
the die is passivated at the active areas.
Features
• Frequency range: 21.2–26.5 GHz
• High gain: 23 dB
• Low noise figure: 2.3 dB
• Input and output return loss: >10 dB
• Single supply bias: 5 volts, 28 mA
• Optional bias adjust
Applications
• Digital Radio Communication Systems (21.2–23.6 GHz
and 24.5–26.5 GHz)
• Any narrow band application within 21–26 GHz
• 24.1 GHz collision avoidance
• Front-end gain stage
Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
V
D1, VD2
Drain Supply Voltage
V
8
V
G1, VG2
Gate Supply Voltage
V
0.4
2
I
D1
Drain Supply Current
mA
35
I
D2
Drain Supply Current
mA
35
P
in
RF Input Power
dBm
15
T
ch
Channel Temperature
°C
+150
T
b
Operating Backside Temperature
°C
-55
+140
T
stg
Storage Temperature
°C
-65
+165
T
max
Max. Assembly Temp (60 sec max)
°C
+300
Notes:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
Chip Size:
1880 x 600 µm (74 x 23.6 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness:
100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions:
80 x 80 µm (3.1 x 3.1 mils), or larger


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