2SC3134 datasheet(1/1 Pages) KEXIN

Teilenummer	2SC3134

Bauteilbeschribung	NPN Epitaxial Planar Silicon Transistor

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

NPN Epitaxial Planar Silicon Transistor

2SC3134

Features

High VEBO.

Wide ASO and high durability against breakdown.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

15

V

Collector current

IC

150

mA

Collector current (pulse)

Icp

300

mA

Collector dissipation

PC

200

mW

Junction temperature

Tj

125

Storage temperature

Tstg

-55to+125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB=40V, IE=0

0.1

ìA

Emitter cutoff current

IEBO

VEB=10V, IC=0

0.1

ìA

DC current gain

hFE

VCE=6V, IC=1mA

90

560

Gain bandwidth product

fT

VCE=6V, IC=1mA

100

MHz

Output capacitance

Cob

VCB=6V, f=1MHz

2.2

pF

Collector-emitter saturation voltage

VCE(sat) IC=50mA, IB=5mA

0.5

V

Collector-base breakdown voltage

V(BR)CBO IC=10ìA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA, RBE=

50

V

Emitter-base breakdown voltage

V(BR)EBO IE=10ìA, IC=0

15

V

hFE Classification

Marking

Rank

4

5

6

7

hFE

90

180

135

270

200

400

300

600

H

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