| Datenblatt-Suchmaschine für elektronische Bauteile |
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BAS82 Datenblatt(PDF) 2 Page - Vishay Siliconix |
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BAS82 Datenblatt(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() BAS81...BAS83 Vishay Telefunken Rev. 3, 01-April-99 2 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85509 Characteristics (Tj = 25_C unless otherwise specified) 0 2 4 6 8 10 12 14 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) 15794 VR = 60 V 540K/W PR–Limit @100%VR PR–Limit @80%VR RthJA= Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 0.1 1.0 10.0 100.0 1000.0 25 50 75 100 125 150 0.1 1.0 10.0 100.0 1000.0 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) 15795 VR = VRRM Figure 2. Reverse Current vs. Junction Temperature 0 0.5 1.0 1.5 2.0 VF – Forward Voltage ( V ) 15796 Tj =25°C Tj = 150°C 0.1 1 10 100 1000 0.01 Figure 3. Forward Current vs. Forward Voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 VR – Reverse Voltage ( V ) 15797 f=1MHz Figure 4. Diode Capacitance vs. Reverse Voltage |
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