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BFQ591 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BFQ591
Bauteilbeschribung  isc Silicon NPN RF Transistor
PDF  4 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BFQ591 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
BFQ591
DESCRIPTION
·High Power Gain
·High Current Gain Bandwidth Product
·Low Noise Figure
APPLICATIONS
·Designed for use in MATV or CATV amplifiers and RF
communications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
200
mA
PC
Collector Power Dissipation
@TC=25℃
2.25
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~150
℃
isc Website：www.iscsemi.cn


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