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2SC3552 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SC3552
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3552 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3552
DESCRIPTION
·High Breakdown Voltage
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
B
Base Current- Continuous
6
A
PC
Collector Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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