BD500 datasheet(1/2 Pages) ISC

Teilenummer	BD500

Bauteilbeschribung	isc Silicon PNP Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BD500/B

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -50V(Min)

-80V(Min)

·High Power Dissipation

APPLICATIONS

·Designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD500

-55

VCBO

Collector-Base Voltage

BD500B

-85

V

BD500

-50

VCEO

Collector-Emitter Voltage

BD500B

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

PC

Collector Power Dissipation

@ TC=25℃

75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.39

℃/W

isc Website：www.iscsemi.cn

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