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BDT30F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BDT30F
Bauteilbeschribung  isc Silicon PNP Power Transistors
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT30F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BDT30F/AF/BF/CF/DF
DESCRIPTION
·DC Current Gain -hFE = 40(Min)@ IC= -0.4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF
-80V(Min)- BDT30BF; -100V(Min)- BDT30CF
-120V(Min)- BDT30DF
·Complement to Type BDT29F/AF/BF/CF/DF
APPLICATIONS
·Designed for use in audio output stages , general purpose
amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT30F
-80
BDT30AF
-100
BDT30BF
-120
BDT30CF
-140
VCBO
Collector-Base
Voltage
BDT30DF
-160
V
BDT30F
-40
BDT30AF
-60
BDT30BF
-80
BDT30CF
-100
VCEO
Collector-Emitter
Voltage
BDT30DF
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-3
A
IB
B
Base Current
-0.4
A
PC
Collector Power Dissipation
TC=25℃
19
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
9.17
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
55
℃/W
isc Website：www.iscsemi.cn


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