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BDT60F Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer BDT60F
Bauteilbeschribung  isc Silicon PNP Darlington Power Transistors
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT60F Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDT60F
-60
BDT60AF
-80
BDT60BF
-100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT60CF
IC= -30mA; IB= 0
-120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1.5A; IB= -6mA
B
-2.5
V
VBE(on)
Base-Emitter On Voltage
IC= -1.5A ; VCE= -3V
-2.5
V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
VCB=
1/
2VCBO; IE= 0; TJ=150℃
-0.2
-1
mA
ICEO
Collector Cutoff Current
VCE=
1/
2VCEO; IB= 0
-0.2
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5
mA
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -3V
2000
hFE-2
DC Current Gain
IC= -1.5A ; VCE= -3V
750
hFE-3
DC Current Gain
IC= -4A ; VCE= -3V
250
VECF-1
C-E Diode Forward Voltage
IF= 1.5A
2
V
VECF-2
C-E Diode Forward Voltage
IF= 4A
2.1
V
Switching Times
ton
Turn-On Time
0.3
1.5
μs
toff
Turn-Off Time
IC= -1.5A; IB1= -IB2= -6mA
1.5
5.0
μs
isc Website：www.iscsemi.cn



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