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BU926 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BU926
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU926 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU926
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·Low Saturation Voltage
: VCE(sat)= 1.5V (Max)@IC= 5A
APPLICATIONS
·Designed for use in high-voltage , high-speed , power
switching in inductive circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Base-Emitter Voltage
850
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current- Continuous
2
A
PC
Collector Power Dissipation
@ TC=25℃
120
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.04
℃/W
isc Website：www.iscsemi.cn


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