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2SA1111 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SA1111
Bauteilbeschribung  Silicon PNP Power Transistors
PDF  4 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1111 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1111 2SA1112
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2591/2592
Fig.1 simplified outline (TO-220) and symbol
·Good linearity of hFE
·High VCEO
APPLICATIONS
·For audio frequency, high power
amplifiers application
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SA1111
-150
VCBO
Collector-base voltage
2SA1112
Open emitter
-180
V
2SA1111
-150
VCEO
Collector-emitter voltage
2SA1112
Open base
-180
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-1
A
ICM
Collector current-peak
-1.5
A
PC
Collector power dissipation
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃


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