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2SA1672 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1672 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1672 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -140 V VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A B -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-4V 50 180 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz Switching times ton Turn-on time 0.30 μs tstg Storage time 0.90 μs tf Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V 0.20 μs hFE classifications O P Y 50-100 70-140 90-180 2 |
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