BDT30 datasheet(2/2 Pages) ISC

Teilenummer	BDT30

Bauteilbeschribung	isc Silicon PNP Power Transistors

PDF	2 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT30/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDT30

-40

BDT30A

-60

BDT30B

-80

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDT30C

IC= -30mA; IB= 0

-100

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -0.125A

-0.7

VBE(on)

Base-Emitter On Voltage

IC= -1A ; VCE= -4V

-1.3

ICES

Collector Cutoff Current

VCE= VCEOmax; VBE= 0

-0.2

BDT30/A

VCE= -30V; IB= 0

ICEO

Collector

Cutoff Current

BDT30B/C

VCE= -60V; IB= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.2

hFE-1

DC Current Gain

IC= -0.2A ; VCE= -4V

hFE-2

DC Current Gain

IC= -1A ; VCE= -4V

Current-Gain—Bandwidth Product

IC= -0.2A ; VCE= -10V

MHz

Switching Times

ton

Turn-On Time

0.3

μs

toff

Turn-Off Time

IC= -1.0A; IB1= -IB2= -0.1A

1.0

μs

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