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BUT76AF Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BUT76AF
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUT76AF Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT76AF
DESCRIPTION
·High Voltage
·High Speed Switching
·High Power Dissipation
APPLICATIONS
·Designed for switching mode power supply, inverters,
motor control and relay driver applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current-Continuous
3
A
IBM
Base Current-peak
6
A
PC
Collector Power Dissipation
@TC=25℃
40
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.13
℃/W
isc Website：www.iscsemi.cn


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