MJE243 datasheet(2/2 Pages) ISC

Teilenummer	MJE243

Bauteilbeschribung	isc Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE243

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 10mA; IB= 0

100

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.5 A ;IB= 50mA

0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 1A ;IB= 0.1A

0.6

VBE(sat)

Base-Emitter Saturation Voltage

IC= 2A ;IB= 0.2A

1.8

VBE(on)

Base-Emitter On Voltage

IC= 0.5A; VCE= 1V

1.5

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

VCB= 100V; IE= 0;TC= 125℃

0.1

μA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

0.1

μA

hFE-1

DC Current Gain

IC= 0.2 A ; VCE= 1V

180

hFE-2

DC Current Gain

IC= 1A ; VCE= 1V

Current-Gain—Bandwidth Product

IC= 0.1 A; VCE= 10V; ftest = 10MHz

MHz

COB

Collector Capacitance

IE= 0; VCB= 10V; ftest = 0.1MHz

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