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TCZT8020 Datenblatt(PDF) 2 Page - Vishay Siliconix |
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TCZT8020 Datenblatt(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() TCZT8020 Vishay Telefunken www.vishay.com 2 (7) Rev. A3, 20–Jul–99 Document Number 83774 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current t ≤ 10 ms IFSM 1 A Power dissipation Tamb ≤ 25°C PV 100 mW Junction temperature Tj 100 °C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector-emitter voltage VCEO 70 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Peak collector current tp/T = 0.5, t ≤ 10 ms ICM 100 mA Power dissipation Tamb ≤ 25°C PV 150 mW Junction temperature Tj 100 °C Emitter and Detector matched Parameter Test Conditions Symbol Value Unit Ambient temperature range Tamb –55 to +85 °C Storage temperature range Tstg –55 to +100 °C Soldering temperature 2 mm from case, t ≤ 5 s Tsd 260 °C Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA VF 1.25 1.6 V Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 mA VECO 7 V Collector dark current VCE = 25 V, IF = 0, E = 0 ICEO 100 nA Emitter and Detector matched 1) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector current VCE = 5 V, IF = 20 mA IC 0.25 0.5 mA IC/ IF VCE = 5 V, IF = 20 mA CTR 1.25 2.5 Collector emitter saturation voltage IF = 20 mA, IC = 25 mA VCEsat 0.4 V Cut-off frequency IF = 10 mA, VCE = 5 V, RL = 100 W fC 110 kHz 1) Characteristics are measurement at a separation distance of 4 mm (0.55’) within a common axis of 0.5 mm (0.02’) and parallel within 5 ° |
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