2SA1667 datasheet(1/2 Pages) ISC

Teilenummer	2SA1667

Bauteilbeschribung	isc Silicon PNP Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1667

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -150V(Min)

·DC Current Gain-

: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A)

·Complement to Type 2SC4381

APPLICATIONS

·Designed for TV vertical output ,audio output driver and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-2

A

IB

Base Current-Continuous

-1

A

PC

Collector Power Dissipation

@TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

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