2SA766 datasheet(1/3 Pages) ISC

Teilenummer	2SA766

Bauteilbeschribung	Silicon PNP Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA766

DESCRIPTION

·With TO-66 package

·High power dissipation

·Complement to type 2SC1450

APPLICATIONS

·Line-operated vertical deflection output

·Medium power amplifier

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-150

V

VCEO

Collector-emitter voltage

Open base

-150

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-0.4

A

ICM

Collector current-peak

-1.2

A

PC

Collector power dissipation

TC≤80℃

20

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Fig.1 simplified outline (TO-66) and symbol

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