2SA886 datasheet(1/4 Pages) ISC

Teilenummer	2SA886

Bauteilbeschribung	Silicon PNP Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA886

DESCRIPTION

·

·With TO-126 package

·Complement to type 2SC1847

·Low collector-emitter saturation voltage

APPLICATIONS

·For low-frequency power amplification

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute Maximun Ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-50

V

VCEO

Collector-emitter voltage

Open base

-40

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-1.5

A

ICM

Collector current-peak

-3.0

A

1.2*

1

PC

Collector power dissipation

TC=25℃

5*

2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Note)

*1: Without heat sink

*2: With a 100 × 100 × 2 mm A1 heat sink

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