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BU2507AF Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BU2507AF
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU2507AF Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2507AF
DESCRIPTION
·High Switching Speed
·High Voltage
APPLICATIONS
·Designed for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCESM
Collector-Emitter Voltage VBE=0
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
15
A
IB
B
Base Current-Continuous
4
A
IBM
Base Current-peak
6
A
PC
Collector Power Dissipation
@TC=25℃
45
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.8
K/W
isc Website：www.iscsemi.cn


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