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2SD803 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD803 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2SD803 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA B 1.5 V ICBO Collector Cutoff current VCB= 120V; IE=0 100 μA IEBO Emitter Cut-off current VEB= 6V; IC= 0 10 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 2000 hFE-2 DC Current Gain IC= 40A ; VCE= 4V 7 isc Website:www.iscsemi.cn 2 |
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