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2N5344 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2N5344
Bauteilbeschribung  isc Silicon PNP Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5344 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon PNP Power Transistor
2N5344
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -250V(Min)
·High Switching Speed
·High Current-Gain Bandwidth Product-
: fT= 60MHz(Min)@ IC= -0.1A
APPLICATIONS
·Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.38
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.0
A
IB
Base Current-Continuous
-0.5
A
PD
Total Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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