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TSDF1220 Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer TSDF1220
Bauteilbeschribung  Silicon NPN Planar RF Transistor
PDF  6 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSDF1220 Datenblatt(HTML) 2 Page - Vishay Siliconix

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TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 6, 30-Jun-00
2 (6)
Document Number 85066
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35
mm Cu
RthJA
450
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Collector cut-off current
VCE = 12 V, VBE = 0
ICES
100
mA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
2
mA
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
V(BR)CEO
6
V
Collector-emitter saturation voltage
IC = 30 mA, IB = 3 mA
VCEsat
0.1
0.5
V
DC forward current transfer ratio
VCE = 5 V, IC = 20 mA
hFE
50
100
150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Transition frequency
VCE = 5 V, IC = 20 mA, f = 1 GHz
fT
12
GHz
Collector-base capacitance
VCB = 1 V, f = 1 MHz
Ccb
0.3
pF
Collector-emitter capacitance
VCE = 1 V, f = 1 MHz
Cce
0.35
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.5
pF
Noise figure
VCE = 5 V, IC = 3 mA,
ZS = ZSopt, ZL = 50 W, f = 2 GHz
F
1.2
dB
Power gain
VCE = 5 V, IC = 20 mA,
ZS = ZSopt, ZL = 50 W, f = 2 GHz
Gpe
14
dB
Transducer gain
VCE = 5 V, IC = 20 mA,
Z0 = 50 W, f = 2 GHz
S21e2
12.5
dB
Third order intercept point at
output
VCE = 5 V, IC = 20 mA, f = 2 GHz
IP3
22
dBm



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