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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2N6316 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6316 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6315 2N6316 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6315 60 VCBO Collector-base voltage 2N6316 Open emitter 80 V 2N6315 60 VCEO Collector-emitter voltage 2N6316 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-peak 15 A IB Base current 2 A PD Total Power Dissipation TC=25℃ 90 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.94 ℃/W Fig.1 simplified outline (TO-66) and symbol |
Ähnliche Teilenummer - 2N6316 |
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Ähnliche Beschreibung - 2N6316 |
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