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2SC1163 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1163 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1163 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA;IC=0 4 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V VBEsat Base-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 10 μA IEBO Emitter cut-off current VEB=3V; IC=0 10 μA hFE DC current gain IC=50mA ; VCE=10V 30 240 |
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