2SC2970 datasheet(1/3 Pages) ISC

Teilenummer	2SC2970

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2970

DESCRIPTION

·With TO-66 package

·High voltage, high speed

·Low saturation voltage

APPLICATIONS

·For switching applications

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

300

V

VCEO

Collector-emitter voltage

Open base

200

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

5

A

PT

Total power dissipation

TC=25℃

40

W

Tj

Junction temperature

175

℃

Tstg

Storage temperature

-55~175

℃

Fig.1 simplified outline (TO-66) and symbol

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