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2SD762A Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD762A Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD762 60 VCEO(SUS) Collector-emitter sustaining voltage 2SD762A IC=0.2A; L=25mH 80 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.4 A B 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=3V 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 30 μA IEBO Emitter cut-off current VEB=8V; IC=0 1 mA hFE-1 DC current gain IC=0.1A ; VCE=3V 40 hFE-2 DC current gain IC=1A ; VCE=3V 30 160 hFE-2 classifications Q P O 30-60 50-100 80-160 2 |
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