2SD880 datasheet(1/3 Pages) ISC

Teilenummer	2SD880

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD880

DESCRIPTION

·

·With TO-220C package

·Complement to type 2SB834

·Low collector saturation voltage

APPLICATIONS

·Designed for use in audio frequency

power amplifier applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

60

V

VCEO

Collector-emitter voltage

Open base

60

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

3

A

ICM

Collector current-Peak

6

A

IB

B

Base current

0.5

A

PC

Collector dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-50~150

℃

THERMAL CHARACTERISTICS

SYMBOL

CHARACTERISTICS

MAX

UNIT

Rθjc

Thermal resistance junction to case

4.16

℃/W

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