2SD898 datasheet(1/3 Pages) ISC

Teilenummer	2SD898

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD898

DESCRIPTION

·With TO-3 package

·Built-in damper diode

·High voltage ,high power dissipation

·Wide area of safe operation

Fig.1 simplified outline (TO-3) and symbol

APPLICATIONS

·For TV horizontal deflection output

applications

PINNING(see fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

V

VCEO

Collector-emitter voltage

Open base

1500

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current

3

A

ICM

Collector current-peak

3.5

A

PT

Total power dissipation

TC=25℃

50

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

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