| Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SD1159 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1159 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1159 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A, IB=0.4A 0.5 1.0 V VBEsat Base-emitter saturation voltage IC=4A, IB=0.4A 1.5 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 30 160 hFE-2 DC current gain IC=4A ; VCE=5V 25 fT Transition frequency IC=1A ; VCE=5V 10 MHz Switching times tf Fall time IC=5A;IB1=-IB2=0.5A; VCC=50V 0.2 0.5 μs |
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |