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2SD2256 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD2256
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2256 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor
2SD2256
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA, RBE= ∞
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA, IE= 0
120
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA, RBE= ∞
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA, IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 12A ,IB= 24mA
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 25A ,IB= 250mA
3.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 12A ,IB= 24mA
3.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 25A ,IB= 250mA
4.5
V
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
10
μA
ICEO
Collector Cutoff current
VCE= 100V, RBE= ∞
10
μA
hFE-1
DC Current Gain
IC= 12A ; VCE= 4V
2000
20000
hFE-2
DC Current Gain
IC= 25A ; VCE= 4V
500



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