2SB896 datasheet(2/3 Pages) ISC

Teilenummer	2SB896

Bauteilbeschribung	Silicon PNP Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB896 2SB896A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SB896

-20

V(BR)CEO

Collector-emitter

breakdown voltage

2SB896A

IC=-10mA; IB=0

-40

VCEsat

Collector-emitter saturation voltage

IC=-7A; IB=-0.23A

-0.6

VBEsat

Base-emitter saturation voltage

IC=-7A; IB=-0.23A

-1.5

2SB896

VCB=-40V; IE=0

ICBO

Collector

cut-off current

2SB896A

VCB=-50V; IE=0

-50

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-50

μA

hFE-1

DC current gain

IC=-0.1A ; VCE=-2V

hFE-2

DC current gain

IC=-2A ; VCE=-2V

260

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

200

Transition frequency

IC=-0.5A ; VCE=-10V

150

MHz

Switching times

ton

Turn-on time

0.1

μs

tstg

Storage time

0.5

μs

Fall time

IC=-2A ; IB1=-IB2=-66mA

0.1

μs

hFE-2 Classifications

60-120

90-180

130-260

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