2SA1577 datasheet(1/3 Pages) SECOS

Teilenummer	2SA1577

Bauteilbeschribung	PNP Silicon General Purpose Transistor

PDF	3 Pages

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Hersteller	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 3 page

Any changing of specification will not be informed individual

2SA1577

PNP Silicon

General Purpose Transistor

RoHS Compliant Product

COLLECTOR

3

1

BASE

2

EMITTER

K

J

C

H

L

A

B S

G

V

3

1

2

1

2

3

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323

FEAT URES

Power dissipation

PCM

:

200

mW

Temp.=25

Collector current

ICM

:

-500

mA

Collector-base voltage

V(BR)CBO : -40

V

Operating and storage junction temperature range

TJ

Tstg: -55

to +150

ELECTRICAL

CHARACTERISTICS Tamb=25 C unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

-100

µA,I

E=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

-1 mA,IB=0

-32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100

µA,I

C=0

-5

V

Collector cut-off current

ICBO

VCB=-20 V,IE=0

-1

µA

Emitter cut-off current

IEBO

VEB=-4 V,IC=0

-1

DC current gain

hFE(1)

VCE=-3 V,IC=-10 mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA,IB=-10 mA

-0.4

V

Transition frequency

fT

VCE=-5 V,IC=-20 mA,f=100MHz

200

MHz

Collector output capacitance

Cob

VCB=-10 V,IE=0,f=1MHz

7

pF

CLASSIFICATION OF

hFE(1)

Rank

P

Q

R

Range

82-180

120-270

180-390

Marking

HP

HQ

HR

D

Top View

01-Jun-2002 Rev. A

Page 1 of 3

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