BAS19W datasheet(1/1 Pages) SECOS

Teilenummer	BAS19W

Bauteilbeschribung	Surface Mount Switching Diode

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Hersteller	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Surface Mount Switching Diode

BAS19W

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Continuous Reverse Voltage

VR

Vdc

Average Rectified Output Current

Io

200

mA

Power Dissipation

PD

200

mW

Thermal Resistance, Junction to Ambient

R JA

θ

625

ο

o

ELECTRICAL CHARACTERISTICS (TA = 25 Cunless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

(VR = 100 V)

IR

0.1

µAdc

Reverse Breakdown Voltage

(IR = 100 µAdc)

V(BR)

100

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

VF

1

1.25

V

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

5

pF

Reverse Recovery Time

(IF = IR = 30 mAdc, Irr = 0.1 x IR )

trr

50

ns

DEVICE MARKING

BAS19W = KA8

C/W

Junction and Storage Temperature

TJ, Tstg

±55 to +150

C

100

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323(SC-70)

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose Switching Applications

High Conductance

01-Jun-2002 Rev. A

Page 1 of

1

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3

CATHODE

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Elektronische Bauelemente

K

J

C

H

L

B S

G

V

3

1

2

D

Top View

TYPICAL CHARACTERISTICS

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Ähnliche Beschreibung - BAS19W

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BAS19W Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

BAS19W Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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